Gate control of a quantum dot single-electron spin in realistic confining potentials: anisotropy effects

TL;DR

This paper demonstrates through numerical simulations that anisotropy in confining potentials significantly influences the tunability of the g-factor in single-electron quantum dots, impacting spin control for quantum computing.

Contribution

It provides a detailed analysis of how anisotropic potentials affect g-factor tunability, offering insights for designing quantum dot spin devices.

Findings

Anisotropy extends the g-factor tunability range.

Breaking in-plane symmetry affects spin manipulation.

Realistic asymmetric potentials influence quantum dot behavior.

Abstract

Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and its spin can be manipulated through the application of gate potentials. In this paper, we present numerical simulations of such spins in single electron devices for realistic (asymmetric) confining potentials in two-dimensional electrostatically confined quantum dots. Using analytical and numerical techniques we show that breaking the in-plane rotational symmetry of the confining potential leads to a significant effect on the tunability of the g-factor with applied gate potentials. In particular, anisotropy extends the range of tunability to larger quantum dots.