Magnetoresistance and Hall effect in e-doped superconducting SrLaCuO thin films
V. Jovanovic, Z. Z. Li, F. Bouquet, L. Fruchter, H. Raffy

TL;DR
This study investigates the magnetoresistance and Hall effect in electron-doped SrLaCuO thin films, revealing carrier dynamics, anisotropic properties, and comparisons with hole-doped cuprates, contributing to understanding high-temperature superconductivity.
Contribution
It provides new experimental data on the transport properties and anisotropy of electron-doped SrLaCuO thin films, highlighting the existence of two types of carriers and spin scattering effects.
Findings
Hall effect changes sign, indicating two types of carriers
Negative magnetoresistance suggests spin scattering
Anisotropic properties comparable to hole-doped cuprates
Abstract
We have epitaxially grown c-axis oriented SrxLa1-xCuO2 thin films by rf sputtering on KTaO3 substrates with x = 0.12. The as-grown deposits are insulating and a series of superconducting films with various Tc(R=0) up to 26 K have been obtained by in-situ oxygen reduction. Transport measurements in the ab plane of these samples have been undertaken. We report original results on the temperature dependence of the Hall effect and on the anisotropic magnetoresistance (T > Tc). We discuss the magnitude of upper critical fields and anisotropy, the Hall effect, which presents changes of sign indicative of the existence of two types of carriers, the normal state magnetoresistance, negative in parallel magnetic field, a possible signature of spin scattering. These properties are compared to those of hole-doped cuprates, such as BiSr(La)CuO with comparable Tc.
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