Si3N4 single-crystal nanowires grown from silicon micro and nanoparticles near the threshold of passive oxidation

TL;DR

This paper presents a catalyst-free method for synthesizing silicon nitride nanowires using oxide-assisted growth, highlighting the importance of oxygen partial pressure in achieving high yield and controlling nanowire dimensions.

Contribution

It introduces a simple oxide-assisted, catalyst-free synthesis technique for silicon nitride nanowires, emphasizing the role of oxygen partial pressure in optimizing yield and nanowire size.

Findings

High yield of silicon nitride nanowires achieved near passive oxidation threshold.

Oxygen partial pressure critically influences nanowire growth and silica layer formation.

Nanowire dimensions can be controlled through synthesis temperature.

Abstract

A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions.