Localized magnetic states in biased bilayer and trilayer graphene

TL;DR

This paper investigates how impurity-induced localized magnetic states in biased bilayer and trilayer graphene depend on gate bias, impurity energy, and the unique electronic properties of these materials, revealing distinct magnetic behaviors.

Contribution

It provides a detailed analysis of impurity magnetic states in biased multilayer graphene, highlighting the effects of gate bias and the mixing of Dirac and conventional fermion characteristics.

Findings

Magnetic boundary features show mixing of Dirac and conventional fermion characteristics.

Impurity magnetization diminishes near the Dirac point at zero bias.

Gate bias induces different impurity magnetic behaviors in bilayer and trilayer graphene.

Abstract

We study the localized magnetic states of impurity in biased bilayer and trilayer graphene. It is found that the magnetic boundary for bilayer and trilayer graphene presents the mixing features of Dirac and conventional fermion. For zero gate bias, as the impurity energy approaches the Dirac point, the impurity magnetization region diminishes for bilayer and trilayer graphene. When a gate bias is applied, the dependence of impurity magnetic states on the impurity energy exhibits a different behavior for bilayer and trilayer graphene due to the opening of a gap between the valence and the conduction band in the bilayer graphene with the gate bias applied. The magnetic moment and the corresponding magnetic transition of the impurity in bilayer graphene are also investigated.