Room temperature ferromagnetism in carbon-implanted ZnO
Shengqiang Zhou, Qingyu Xu, Kay Potzger, Georg Talut, Rainer, Groetzschel, Juergen Fassbender, Mykola Vinnichenko, Joerg Grenzer, Manfred, Helm, Holger Hochmuth, Michael Lorenz, Marius Grundmann, Heidemarie Schmidt
TL;DR
This paper demonstrates that ion implantation of carbon into ZnO films induces room temperature ferromagnetism, providing an alternative doping method and evidence of carbon's chemical role in magnetic behavior.
Contribution
It introduces ion implantation as a new method to achieve ferromagnetic ZnO and shows the chemical involvement of carbon in this magnetism.
Findings
Room temperature ferromagnetism observed in carbon-implanted ZnO.
Ion implantation is an effective alternative doping method.
Chemical involvement of carbon in ferromagnetism is indirectly proven.
Abstract
Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO films by ion implantation. Room temperature ferromagnetism has been observed. Our analysis demonstrates that (1) C-doped ferromagnetic ZnO can be achieved by an alternative method, i.e. ion implantation, and (2) the chemical involvement of carbon in the ferromagnetism is indirectly proven.
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