Semiconductor-based superlens for sub-wavelength resolution below the dif-fraction limit at extreme ultraviolet frequencies

TL;DR

This paper theoretically demonstrates that semiconductor multilayer stacks can achieve negative refraction and sub-wavelength resolution below the diffraction limit at UV and extreme UV frequencies, opening new avenues for imaging and photonics.

Contribution

It introduces a novel approach using semiconductor/dielectric multilayers for superlensing at UV and extreme UV wavelengths, expanding beyond traditional metal-based systems.

Findings

Negative refraction achieved in semiconductor multilayers

Sub-wavelength resolution below diffraction limit demonstrated

Potential applications in UV and soft X-ray imaging

Abstract

We theoretically demonstrate negative refraction and sub-wavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like re-sponse of typical semiconductors such as GaAs or GaP makes it possible to achieve negative refraction and super-guiding in resonant semiconductor/dielectric multilayer stacks, similar to what has been demonstrated in metallo-dielectric photonic band gap structures. The exploita-tion of this basic property in semiconductors raises the possibility of new, yet-untapped ap-plications in the UV and soft x-ray ranges.