Studying the single--electron transistor by photoionization

TL;DR

This paper explores the use of photoionization as a novel method for investigating single-electron transistors, providing theoretical insights and experimental suggestions.

Contribution

It introduces a new approach using photoionization to study single-electron transistors, complementing traditional transport measurements.

Findings

Photoionization can effectively probe single-electron transistors.

Theoretical results suggest feasible experimental protocols.

Combining photoionization with transport measurements enhances analysis.

Abstract

We present theoretical results demonstrating that photoionization can be a useful tool for investigating single--electron transistors. Suggestions are given on how to conduct experiments using photoionization alone or in combination with transport measurements.