Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems

TL;DR

This paper reviews the theoretical framework for diffusive electron transport in quasi-2D and quasi-1D semiconductor structures, emphasizing scattering mechanisms and detailed transport modeling in silicon MOSFETs and nanowires.

Contribution

It provides a comprehensive overview of the theoretical methods used to simulate diffusive electron transport in low-dimensional semiconductor systems.

Findings

Transport is scattering-limited and well described by the Boltzmann transport equation.

Detailed analysis of transport in silicon MOSFETs and nanowires.

Highlights the role of various scattering mechanisms in low-dimensional structures.

Abstract

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different states due to efficient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering-limited (diffusive) and well described by the Boltzmann transport equation. In this review, we present the theoretical framework used for the description and simulation of diffusive electron transport in quasi-two-dimensional and quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs and nanowires is presented in detail.