The Berry phase of dislocations in graphene and valley conserving decoherence
Andrej Mesaros, Darius Sadri, Jan Zaanen

TL;DR
This paper explores how dislocations in graphene induce valley-dependent Berry phases affecting electron transport, revealing conditions under which valley coherence influences magnetoconductance and how decoherence impacts these topological effects.
Contribution
It introduces a detailed analysis of valley-specific Berry phases caused by dislocations and examines their effects on quantum transport and decoherence in graphene devices.
Findings
Dislocations induce quantized Berry phases of 0, 1/3, -1/3 in graphene.
Valley coherence effects depend on the ratio of intervalley mean free path to phase coherence length.
Decoherence models show magnetoconductance remains even in flux when valleys are conserved.
Abstract
We demonstrate that dislocations in the graphene lattice give rise to electron Berry phases equivalent to quantized values {0,1/3,-1/3} in units of the flux quantum, but with an opposite sign for the two valleys. An elementary scale consideration of a graphene Aharonov-Bohm ring equipped with valley filters on both terminals, encircling a dislocation, says that in the regime where the intervalley mean free path is large compared to the intravalley phase coherence length, such that the valley quantum numbers can be regarded as conserved on the relevant scale, the coherent valley-polarized currents sensitive to the topological phases have to traverse the device many times before both valleys contribute, and this is not possible at intermediate temperatures where the latter length becomes of order of the device size, thus leading to an apparent violation of the basic law of linear…
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