Single shot measurement of a silicon single electron transistor

TL;DR

This paper demonstrates a cryogenic CMOS circuit enabling real-time, single-shot measurements of a silicon single electron transistor, revealing long relaxation times and potential for quantum computing applications.

Contribution

It introduces a custom cryogenic CMOS circuit for high-bandwidth, single-shot measurements of a silicon single electron transistor, a novel approach for quantum device characterization.

Findings

Observed relaxation times up to 90 microseconds

Detected well-isolated electron excitations within the device

Indicated potential for long decoherence times in quantum applications

Abstract

We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorous-doped silicon single electron transistor that was irradiated with a microwave pulse. Relaxation times up to 90 us are observed, suggesting the presence of well isolated electron excitations within the device. It is expected that these are associated with long decoherence time and the device may be suitable for quantum information processing.