Transport gap in side-gated graphene constrictions

TL;DR

This paper investigates the transport gap in side-gated graphene constrictions, analyzing how gate voltages and magnetic fields influence conductance and edge states, revealing insights into quantum transport phenomena.

Contribution

It provides a comprehensive experimental analysis of the transport gap and edge states in graphene constrictions with varying geometries and gating conditions.

Findings

Transport gap width correlates with Coulomb blockade features.

High side gate voltages can lift conductance suppression.

Magnetic fields reveal the presence of edge states.

Abstract

We present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized states. We study the effect of an applied side gate voltage on the transport gap and show that high side gate voltages lift the suppression of the conductance. Finally we study the effect of an applied magnetic field and demonstrate the presence of edge states in the constriction.