Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs

TL;DR

This paper explores advanced spintronic devices and phenomena, including magnetic resonant tunneling, spin-orbit coupling effects, and properties of GaMnAs, aiming to enhance magnetic and electronic control in semiconductor heterostructures.

Contribution

It presents recent experimental and theoretical developments in spintronics, focusing on hybrid ferromagnetic metal/semiconductor structures and their novel magnetic and electronic effects.

Findings

Digital magnetoresistor created with magnetic resonant diodes

Ferromagnetic semiconductors in resonant tunneling diodes induce new effects

Tunneling anisotropic magnetoresistance in Fe/GaAs junctions analyzed

Abstract

Spintronics has attracted wide attention by promising novel functionalities derived from both the electron charge and spin. While branching into new areas and creating new themes over the past years, the principal goals remain the spin and magnetic control of the electrical properties, essentially the I-V characteristics, and vice versa. There are great challenges ahead to meet these goals. One challenge is to find niche applications for ferromagnetic semiconductors, such as GaMnAs. Another is to develop further the science of hybrid ferromagnetic metal/semiconductor heterostructures, as alternatives to all-semiconductor room temperature spintronics. Here we present our representative recent efiorts to address such challenges. We show how to make a digital magnetoresistor by combining two magnetic resonant diodes, or how introducing ferromagnetic semiconductors as active regions in resonant tunneling diodes leads to novel efiects of digital magnetoresistance and of magnetoelectric current oscillations. We also discuss the phenomenon of tunneling anisotropic magnetoresistance in Fe/GaAs junctions by introducing the concept of the spin-orbit coupling field, as an analog of such fields in all-semiconductor junctions. Finally, we look at fundamental electronic and optical properties of GaMnAs by employing reasonable tight-binding models to study disorder efiects.