Ab initio calculation of structural and electronic properties of Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N alloys
E. Lopez-Apreza, J. Arriaga, and D. Olguin

TL;DR
This study employs ab initio density functional theory calculations to investigate the structural and electronic properties of AlGaN and InGaN alloys, revealing deviations from Vegard's law and providing insights into their band gaps, effective masses, and phonon modes.
Contribution
First ab initio study to analyze structural and electronic properties of AlGaN and InGaN alloys using FP-LAPW method, highlighting non-linear compositional dependencies.
Findings
Lattice parameters show bowing behavior deviating from Vegard's law.
Band gaps do not follow Vegard's law and exhibit bowing.
Calculated phonon modes agree with experimental data.
Abstract
Using the density functional theory (DFT) with the generalized gradient approximation (GGA), the structural and electronic properties of wurtzite AlN, GaN, InN, and their related alloys, AlGaN and InGaN, were calculated. We have performed accurate {\it ab initio} total energy calculations using the full--potential linearized augmented plane wave (FP--LAPW) method to investigate the structural and electronic properties. In both alloys we found that the fundamental parameters do not follow Vegard's law. The lattice parameters, and , for the AlGaN alloy are found to exhibit downward bowing, while for InGaN there is an upward bowing for the and parameters and a downward bowing for the internal parameter, . Furthermore, we found that for both alloys, the band gap value does not follow Vegard's law. As a by--product of our…
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Taxonomy
TopicsGaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor Quantum Structures and Devices
