Energy-resolved spatial inhomogeneity of disordered Mott systems

TL;DR

This study explores how weak to moderate disorder influences the spatial inhomogeneity of electronic states near the Mott transition in two-dimensional systems, revealing energy-dependent screening effects.

Contribution

It uncovers energy-resolved disorder screening phenomena near the Mott transition, highlighting contrasting behaviors of low and high energy states.

Findings

Low-energy states become more homogeneous near the transition

High-energy states exhibit increased inhomogeneity near the transition

Energy-resolved disorder screening is likely a universal feature

Abstract

We investigate the effects of weak to moderate disorder on the T=0 Mott metal-insulator transition in two dimensions. Our model calculations demonstrate that the electronic states close to the Fermi energy become more spatially homogeneous in the critical region. Remarkably, the higher energy states show the opposite behavior: they display enhanced spatial inhomogeneity precisely in the close vicinity to the Mott transition. We suggest that such energy-resolved disorder screening is a generic property of disordered Mott systems.