Admittance and noise in an electrically driven nano-structure: Interplay between quantum coherence and statistics

TL;DR

This paper explores how quantum coherence and statistical effects influence admittance and noise in nano-structures, providing new theoretical expressions and demonstrating them with double quantum dot calculations.

Contribution

It introduces a theoretical framework linking quantum phase coherence with many-body correlations in driven nano-structures, including new formulas for admittance and noise.

Findings

Admittance peaks align with steps in noise power near certain gate voltages.

Derived a non-equilibrium fluctuation-dissipation relation for driven nano-structures.

Validated theory with calculations on double quantum dots.

Abstract

We investigate the interplay between the quantum coherence and statistics in electrically driven nano-structures. We obtain expression for the admittance and the current noise for a driven nano-capacitor in terms of the Floquet scattering matrix and derive a non-equilibrium fluctuation-dissipation relation. As an interplay between the quantum phase coherence and the many-body correlation, the admittance has peak values whenever the noise power shows a step as a function of near-by gate voltage. Our theory is demonstrated by calculating the admittance and noise of driven double quantum dots.