High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)

TL;DR

This supplementary information details the characterization and fabrication processes of high-mobility few-layer graphene transistors on ferroelectric PZT substrates, highlighting their electrical properties and material interfaces.

Contribution

It provides comprehensive experimental procedures and measurements for creating and analyzing graphene transistors on ferroelectric gate oxides, advancing device integration techniques.

Findings

High-quality PZT films characterized for dielectric properties.

Successful fabrication of high-mobility graphene transistors on PZT.

Electrical measurements demonstrate enhanced device performance.

Abstract

Supplementary Information to arXiv:0810.4466: 1. Characterizations of Pb(Zr_0.2Ti_0.8)O_3 (PZT) films. 2. Substrate preparation before the exfoliation of graphene. 3. The band structure of FLG. 4. Dielectric constant measurements of PZT. 5. rho(V_g) and R_H(V_g) fitting inside the band overlap regime. 6. The deformation potential of longitudinal acoustic (LA) phonons in graphene. 7. Resistivity and Hall measurements of a SiO_2-gated FLG.