The magnetoresistance tensor of La(0.8)Sr(0.2)MnO(3)

TL;DR

This study measures the anisotropic magnetoresistance and planar Hall effect in La(0.8)Sr(0.2)MnO(3) thin films, deriving a magnetoresistance tensor that captures the crystal symmetry and anisotropy effects.

Contribution

It introduces a 4th-order magnetoresistance tensor for La(0.8)Sr(0.2)MnO(3), linking crystal symmetry with magnetotransport properties.

Findings

AMR and PHE depend strongly on current orientation.

The magnetoresistance tensor reflects crystal symmetry.

Bi-axial magnetocrystalline anisotropy is characterized.

Abstract

We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis oriented epitaxial thin films of La(0.8)Sr(0.2)MnO(3), for different current directions relative to the crystal axes, and show that both AMR and PHE depend strongly on current orientation. We determine a magnetoresistance tensor, extracted to 4th order, which reflects the crystal symmetry and provides a comprehensive description of the data. We extend the applicability of the extracted tensor by determining the bi-axial magnetocrystalline anisotropy in our samples.