Contact resistance and shot noise in graphene transistors
J. Cayssol, B. Huard, and D. Goldhaber-Gordon
TL;DR
This paper examines how potential steps at metallic contacts affect contact resistance and shot noise in graphene transistors, providing simple models for different transport regimes.
Contribution
It introduces analytical expressions to estimate contact-induced resistance and noise in graphene transistors across diffusive and ballistic regimes.
Findings
Contact steps significantly influence resistance and noise.
Derived simple formulas for contact effects in various regimes.
Provides insights for optimizing graphene transistor performance.
Abstract
Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent contribution of the contacts to the total resistance and noise in the diffusive and ballistic regimes.
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