All-graphene integrated circuits via strain engineering

TL;DR

This paper proposes a method to create all-graphene electronic devices by using strain engineering to manipulate graphene's electronic properties, enabling components like channels and surface states without damaging the material.

Contribution

It introduces a strain-based approach to design all-graphene circuits, avoiding direct patterning on graphene and preserving its integrity.

Findings

Strain can generate electron beam collimation and 1D channels.

Surface states and confinement can be achieved through strain.

Patterning on substrates protects graphene's integrity.

Abstract

We propose a route to all-graphene integrated electronic devices by exploring the influence of strain on the electronic structure of graphene. We show that strain can be easily tailored to generate electron beam collimation, 1D channels, surface states and confinement, the basic elements for all-graphene electronics. In addition this proposal has the advantage that patterning can be made on substrates rather than on the graphene sheet, thereby protecting the integrity of the latter.