A scheme for spin transistor with extremely large on/off current ratio
L. Wang, K. Shen, S. Y. Cho, M. W. Wu

TL;DR
This paper proposes a quantum wire-based spin transistor utilizing periodic Rashba spin-orbit coupling, achieving extremely high on/off current ratios through quantum interference effects, even under disorder conditions.
Contribution
It introduces a novel spin transistor design with periodic Rashba coupling that significantly enhances on/off ratios via quantum interference effects.
Findings
Achieves large on/off current ratios through Fano-Rashba quantum interference.
Demonstrates robustness of the device performance under strong disorder.
Provides a new approach for high-performance spin field-effect transistors.
Abstract
Quantum wires with periodic local Rashba spin-orbit couplings are proposed for a higher performance of spin field-effect transistor. Fano-Rashba quantum interference due to the spin-dependent modulated structure gives rise to a broad energy range of vanishingly small transmission. Tuning Rashba spin-orbit couplings can provide the on- or off-currents with extremely large on/off current ratios even in the presence of a strong disorder.
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