Magnetic susceptibility of YbRh2Si2 and YbIr2Si2 on the basis of a localized 4f electron approach
A.S. Kutuzov (1), A.M. Skvortsova (1), S.I. Belov (1), J., Sichelschmidt (2), J. Wykhoff (2), I. Eremin (3), C. Krellner (2), C. Geibel, (2), B.I. Kochelaev (1) ((1) Physics Department, Kazan State University,, Kazan, Russia
TL;DR
This paper models the magnetic susceptibility of YbRh2Si2 and YbIr2Si2 using a localized 4f electron approach, successfully fitting experimental data and capturing non-Fermi-liquid behavior in these Kondo lattice compounds.
Contribution
It introduces a localized 4f electron model combined with Kondo interaction to accurately describe magnetic susceptibility in YbRh2Si2 and YbIr2Si2.
Findings
Successfully fits experimental susceptibility data over wide temperature range
Captures non-Fermi-liquid behavior in thermodynamic and transport properties
Provides a simple molecular field approximation for Kondo interactions
Abstract
We consider the local properties of the Yb3+ ion in the crystal electric field in the Kondo lattice compounds YbRh2Si2 and YbIr2Si2. On this basis we have calculated the magnetic susceptibility taking into account the Kondo interaction in the simplest molecular field approximation. The resulting Curie-Weiss law and Van Vleck susceptibilities could be excellently fitted to experimental results in a wide temperature interval where thermodynamic and transport properties show non-Fermi-liquid behaviour for these materials.
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