Thickness-tuned Superconductor-to-Insulator Transitions under magnetic field in a-NbSi
C.A. Marrache-Kikuchi, H. Aubin, A. Pourret, K. Behnia, J. Lesueur, L., Berge, L. Dumoulin

TL;DR
This study investigates how the thickness of a-NbSi thin films influences the superconductor-to-insulator transition under magnetic fields, revealing critical behavior and phase diagrams that challenge existing models.
Contribution
It provides new experimental data on critical exponents and phase diagrams for thickness-tuned transitions in a-NbSi films under magnetic fields, within the dirty boson model framework.
Findings
Critical exponent product $ u_d z$ > 0.4
Phase diagram in (H,d) plane inferred
Non-universal critical resistance observed
Abstract
We have studied the thickness-induced superconductor-to-insulator transition in the presence of a magnetic field for a-NbSi thin films. Analyzing the critical behavior of this system within the "dirty boson model", we have found a critical exponents product of > 0.4. The corresponding phase diagram in the (H,d) plane is inferred. This small exponent product as well as the non-universal value of the critical resistance found at the transition call for further investigations in order to thoroughly understand these transitions.
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