Theory of the spontaneous buckling of doped graphene
Doron Gazit

TL;DR
This paper investigates how doping influences the elastic and electronic properties of graphene, predicting spontaneous buckling in hole-doped cases and highlighting effects on elastic waves and resistivity.
Contribution
It introduces a theoretical framework explaining the spontaneous buckling and elastic wave attenuation in doped graphene, revealing new effects of electron-phonon interactions.
Findings
Spontaneous buckling predicted in hole-doped graphene.
Attenuation of elastic waves due to corrugations.
Asymmetry in electrical resistivity between hole- and electron-doped graphene.
Abstract
Graphene is a realization of an esoteric class of materials -- electronic crystalline membranes. We study the interplay between the free electrons and the two-dimensional crystal, and find that it induces a substantial effect on the elastic structure of the membrane. For the hole-doped membrane, in particular, we predict a spontaneous buckling. In addition, attenuation of elastic waves is expected, due to the effect of corrugations on the bulk modulus. These discoveries have a considerable magnitude in graphene, affecting both its mesoscopic structure, and its electrical resistivity, which has an inherent asymmetry between hole- and electron-doped graphene.
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Taxonomy
TopicsGraphene research and applications · Advanced Materials and Mechanics · Nanopore and Nanochannel Transport Studies
