Light localization induced enhancement of third order nonlinearities in a GaAs photonic crystal waveguide
A. Baron, A. Ryasnyanskiy, N. Dubreuil, P. Delaye, Q. Vy Tran, S., Combrie, A. de Rossi, R. Frey, G. Roosen

TL;DR
This paper demonstrates significant enhancement of third-order nonlinearities in GaAs photonic crystal waveguides caused by slow light effects, supported by experiments and a theoretical model, highlighting potential for optical switching applications.
Contribution
It introduces a theoretical model that accurately predicts nonlinear enhancements in GaAs PCWs due to slow light, validated by experimental data.
Findings
Large enhancement of third-order nonlinearities observed
Good agreement between theory and experiment
Implications for optical switching devices
Abstract
Nonlinear propagation experiments in GaAs photonic crystal waveguides (PCW) were performed, which exhibit a large enhancement of third order nonlinearities, due to light propagation in a slow mode regime, such as two-photon absorption (TPA), optical Kerr effect and refractive index changes due to TPA generated free-carriers. A theoretical model has been established that shows very good quantitative agreement with experimental data and demonstrates the important role that group velocity plays. These observations give a strong insight into the use of PCWs for optical switching devices.
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