External noise effects on the electron velocity fluctuations in semiconductors

TL;DR

This study explores how external correlated noise influences electron velocity fluctuations in low-doped semiconductors, revealing that such noise can significantly alter the spectral density and suppress total noise power.

Contribution

It introduces a Monte Carlo simulation approach to analyze the impact of external correlated noise on carrier noise spectra in semiconductors.

Findings

External noise modifies the spectral density of carrier noise.

The intensity and correlation time of the external noise significantly affect the noise spectra.

External noise can suppress the total noise power in the system.

Abstract

We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo approach is adopted to numerically solve the transport equation by considering all the possible scattering phenomena of the hot electrons in the medium. We show that the noise spectra are strongly affected by the intensity and the correlation time of the external random electric field. Moreover this random field can cause a suppression of the total noise power.