On the possibility of tunable-gap bilayer graphene FET

TL;DR

This paper investigates the potential of bilayer graphene FETs with tunable bandgaps controlled by vertical electric fields, using atomistic simulations to assess their suitability for CMOS applications.

Contribution

It demonstrates the feasibility of tuning the bandgap in bilayer graphene FETs via electric fields and evaluates their device performance through detailed simulations.

Findings

Bandgap tuning is possible with vertical electric fields.

Band-to-band tunneling limits the on/off ratio.

Device performance may not meet CMOS requirements.

Abstract

We explore the device potential of tunable-gap bilayer graphene FET exploiting the possibility of opening a bandgap in bilayer graphene by applying a vertical electric field via independent gate operation. We evaluate device behavior using atomistic simulations based on the self-consistent solution of the Poisson and Schroedinger equations within the NEGF formalism. We show that the concept works, but bandgap opening is not strong enough to suppress band-to-band tunneling in order to obtain a sufficiently large Ion/Ioff ratio for CMOS device operation.