Mobility in Graphene Double Gate Field Effect Transistors

TL;DR

This study investigates carrier mobility in monolayer graphene double-gate FETs, demonstrating that graphene FETs outperform silicon-based devices in mobility, highlighting their potential for high-performance electronics.

Contribution

It provides a comparative analysis of carrier mobilities in single- and double-gated graphene FETs, showing superior mobility in graphene devices over silicon counterparts.

Findings

Graphene FETs have higher carrier mobility than silicon FETs.

Double-gated graphene FETs maintain high mobility across a wide range.

Graphene mobility exceeds the universal silicon mobility in most conditions.

Abstract

In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra thin body silicon-on-insulator MOSFETs can not compete with graphene FET values.