Optical bistability in a GaAs based polariton diode

TL;DR

This paper demonstrates a novel optical bistability in a GaAs polariton diode, achieved through electric field control, enabling low-power switching and propagation of switching fronts across a microcavity surface.

Contribution

It introduces a new type of optical nonlinearity in polariton microcavities with electric field-induced bistability at low powers, distinct from Kerr effects.

Findings

Bistability observed at 2-3 orders of magnitude lower power than Kerr bistability.

Switching fronts propagate across a 300x300 micron mesa surface.

Abrupt switching between strong and weak coupling regimes induced by electric field control.

Abstract

We report on a new type of optical nonlinearity in a polariton p-i-n microcavity. Abrupt switching between the strong and weak coupling regime is induced by controlling the electric field within the cavity. As a consequence bistable cycles are observed for low optical powers (2-3 orders of magnitude less than for Kerr induced bistability). Signatures of switching fronts propagating through the whole 300 microns x 300 microns mesa surface are evidenced.