Electromagnetic properties of graphene junctions
S. E. Shafranjuk
TL;DR
This paper investigates how external electromagnetic fields influence resonant chiral tunneling in graphene junctions, revealing their potential for tunable nanoelectronic devices operating in the THz range.
Contribution
It introduces a detailed analysis of electromagnetic field effects on chiral tunneling in graphene junctions, highlighting their modulation and application potential.
Findings
EF polarization and frequency significantly affect tunneling characteristics
GJs exhibit strong tunability for nanoelectronic applications in the THz range
External EF can control electron and hole wavefunction phases during tunneling
Abstract
A resonant chiral tunneling (CT) across a graphene junction (GJ) induced by an external electromagnetic field (EF) is studied. Modulation of the electron and hole wavefunction phases by the external EF during the CT processes strongly impacts the CT directional diagram. Therefore the a.c. transport characteristics of GJs depend on the EF polarization and frequency considerably. The GJ shows great promises for various nanoelectronic applications working in the THz diapason.
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Taxonomy
TopicsAdvanced Physical and Chemical Molecular Interactions · Chemical and Physical Properties of Materials · Scientific Research and Discoveries