Ballistic transport in disordered graphene

TL;DR

This paper develops an analytic theory for electron transport in disordered graphene, analyzing conductance, shot noise, and charge transfer statistics across different regimes, including ballistic and diffusive, using transfer matrix and renormalization group methods.

Contribution

It introduces a comprehensive analytic framework for understanding ballistic transport and disorder effects in graphene, including a phase diagram of transport regimes.

Findings

Conductance and shot noise behavior analyzed at the Dirac point and finite gate voltage.

Crossover from ballistic to diffusive transport regimes characterized.

Phase diagram of transport regimes in disordered graphene constructed.

Abstract

An analytic theory of electron transport in disordered graphene in a ballistic geometry is developed. We consider a sample of a large width W and analyze the evolution of the conductance, the shot noise, and the full statistics of the charge transfer with increasing length L, both at the Dirac point and at a finite gate voltage. The transfer matrix approach combined with the disorder perturbation theory and the renormalization group is used. We also discuss the crossover to the diffusive regime and construct a ``phase diagram'' of various transport regimes in graphene.