Quantum control and manipulation of donor electrons in Si-based quantum computing

TL;DR

This paper discusses the potential of doped silicon for quantum computing, focusing on controlling donor electrons via external fields near interfaces, crucial for scalable quantum devices.

Contribution

It defines key parameters and conditions for manipulating donor electrons in silicon using electric and magnetic fields, advancing quantum control techniques.

Findings

Identifies critical parameters for electron manipulation

Establishes conditions for external field control

Enhances understanding of donor electron behavior in Si

Abstract

Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades. This proposal for a quantum computer ultimately relies on the quantum control of electrons bound to donors near a Si/barrier (e.g. SiO2) interface. We address here several important issues and define critical parameters that establish the conditions that allow the manipulation of donor electrons in Si by means of external electric and magnetic fields.