Growth mechanism for epitaxial graphene on vicinal 6H-SiC(0001) surfaces

TL;DR

This paper investigates the microscopic growth processes of epitaxial graphene on vicinal 6H-SiC(0001) surfaces, revealing how heating rates influence layer quality and size through step retraction and Si desorption dynamics.

Contribution

It identifies the sequence of microscopic processes involved in bilayer graphene formation and demonstrates how faster heating rates promote larger single-layer graphene growth.

Findings

Faster heating rates lead to larger single-layer graphene films.

Different step retraction speeds are linked to Si desorption rates.

Characteristic 'fingers' form during step catch-up due to carbon release.

Abstract

The inability to grow large well ordered graphene with a specific number of layers on SiC(0001) is well known. The growth involves several competing processes (Si desorption, carbon diffusion, island nucleation etc.), and because of the high temperatures, it has not been possible to identify the growth mechanism. Using Scanning tunneling microscopy and an initially vicinal 6H-SiC(0001) sample, we determine the sequence of microscopic processes that result in the formation of bilayer graphene. Adjacent steps retract with different speeds and the carbon released produces characteristic "fingers" when a step of higher speed catches up with a slower moving step. These processes are based on different rates of Si desorption from steps and can be avoided if faster heating rates are used. We also show that faster rates lead to single layer graphene films extending over many microns.