Improvement of structural, electronic, and magnetic properties of Co$_2$MnSi thin films by He$^+$-irradiation
O. Gaier, J. Hamrle, B. Hillebrands, M. Kallmayer, P. P\"orsch, G., Sch\"onhense, H.J. Elmers, J. Fassbender, A. Gloskovskii, C.A. Jenkins, G.H., Fecher, C. Felser, E. Ikenaga, Y. Sakuraba, S. Tsunegi, M. Oogane, Y. Ando

TL;DR
This study demonstrates that He$^+$ ion irradiation enhances the structural, electronic, and magnetic properties of Co$_2$MnSi thin films by improving chemical order and aligning properties with the bulk Heusler compound.
Contribution
It reveals that light ion irradiation can improve local chemical order and electronic/magnetic properties in Co$_2$MnSi thin films, a novel approach for material enhancement.
Findings
Irradiation improves local chemical order.
Electronic structure shifts towards bulk properties.
Magnetic properties become more aligned with well-ordered Co$_2$MnSi.
Abstract
The influence of 30 keV He ion irradiation on structural, electronic and magnetic properties of CoMnSi thin films with B2 order was investigated. It was found, that irradiation with light ions can improve the local chemical order. This provokes changes of the electronic structure and element-specific magnetization towards the bulk properties of the well-ordered CoMnSi Heusler compound with L2 structure.
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