Mapping of ion beam induced current changes in FinFETs

TL;DR

This paper demonstrates a method for mapping ion beam induced current changes in FinFETs by using scanning probe alignment and ion beam scanning, revealing localized effects of ion impacts on device current.

Contribution

It introduces a novel technique combining scanning force microscopy with ion beam scanning to spatially map ion-induced current changes in FinFETs.

Findings

Ion impacts cause localized increases in channel current.

High-resolution maps of ion-sensitive regions in FinFETs are obtained.

The method enables precise correlation between ion position and device response.

Abstract

We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 um and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source-drain current are recorded in dependence of the ion beam position in respect to the FinFET. Maps of local areas responding to the ion beam are obtained.