Evolution of electronic structure of doped Mott insulators - reconstruction of poles and zeros of Green's function

TL;DR

This paper investigates how the electronic structure of doped Mott insulators evolves, emphasizing the interplay of poles and zeros in the Green's function, revealing fundamental Mott physics phenomena.

Contribution

It introduces a detailed analysis of pole-zero interference in Green's functions, elucidating the emergence of key Mott insulator features upon doping.

Findings

Pole-zero interference drives pseudogap formation.

Fermi arcs and hole pockets emerge from pole-zero dynamics.

Lifshitz transitions are explained by pole-zero transfer.

Abstract

We study evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the Green function G), interference of the zero surfaces of G with the pole surfaces becomes crucial in the doped Mott insulators. Mutually interfering pole and zero surfaces are dramatically transferred over the Mott gap, when lightly doped holes synergetically loosen the doublon-holon binding. The heart of the Mott physics such as the pseudogap, hole pockets, Fermi arcs, in-gap states, and Lifshitz transitions appears as natural consequences of this global interference in the frequency space.