A Pearson Effective Potential for Monte-Carlo simulation of quantum confinement effects in various MOSFET architectures

TL;DR

This paper introduces a Pearson Effective Potential model for simulating quantum confinement effects in nanoscale MOSFETs, validated through Monte-Carlo simulations showing good agreement with Schrödinger-Poisson results.

Contribution

The paper presents a novel Pearson Effective Potential model that accurately captures quantum confinement effects in various MOSFET architectures using Monte-Carlo simulations.

Findings

Good agreement with Schrödinger-Poisson results on inversion charge

Accurate electron density profiles across different device geometries

Effective Potential approach reliably reproduces quantum effects

Abstract

A Pearson Effective Potential model for including quantization effects in the simulation of nanoscale nMOSFETs has been developed. This model, based on a realistic description of the function representing the non zero-size of the electron wave packet, has been used in a Monte-Carlo simulator for bulk, single gate SOI and double-gate SOI devices. In the case of SOI capacitors, the electron density has been computed for a large range of effective field (between 0.1 MV/cm and 1 MV/cm) and for various silicon film thicknesses (between 5 nm and 20 nm). A good agreement with the Schroedinger-Poisson results is obtained both on the total inversion charge and on the electron density profiles. The ability of an Effective Potential approach to accurately reproduce electrostatic quantum confinement effects is clearly demonstrated.