Epitaxial Zn(x)Fe(3-x)O(4) Thin Films: A Spintronic Material with Tunable Electrical and Magnetic Properties
Deepak Venkateshvaran, Matthias Althammer, Andrea Nielsen, Stephan, Gepraegs, M.S. Ramachandra Rao, Sebastian T. B. Goennenwein, Matthias Opel,, and Rudolf Gross

TL;DR
This study reports the growth and characterization of epitaxial Zn(x)Fe(3-x)O(4) thin films with tunable electrical and magnetic properties, highlighting their potential for spintronic applications.
Contribution
It demonstrates controlled tuning of electrical and magnetic properties in epitaxial Zn(x)Fe(3-x)O(4) films through Zn substitution and oxygen partial pressure during growth.
Findings
Electrical conductivity and magnetization can be widely tuned during growth.
Zn substitution removes Fe3+ moments and charge carriers, affecting properties.
Saturation magnetization correlates with electrical conductivity.
Abstract
The ferrimagnetic spinel oxide Zn(x)Fe(3-x)O(4) combines high Curie temperature and spin polarization with tunable electrical and magnetic properties, making it a promising functional material for spintronic devices. We have grown epitaxial thin films with 0<=x<=0.9 on MgO(001) substrates with excellent structural properties both in pure Ar atmosphere and an Ar/O2 mixture by laser molecular beam epitaxy. We find that the electrical conductivity and the saturation magnetization can be tuned over a wide range during growth. Our extensive characterization of the films provides a clear picture of the underlying physics of this spinel ferrimagnet with antiparallel Fe moments on the A and B sublattice: (i) Zn substitution removes both Fe3+ moments from the A sublattice and itinerant charge carriers from the B sublattice, (ii) growth in finite oxygen partial pressure generates Fe vacancies on…
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