Suspended single-electron transistors: fabrication and measurement
G. S. Paraoanu, A. M. Halvari

TL;DR
This paper reports the fabrication and measurement of suspended aluminum single-electron transistors (SUSETs), which are isolated from the substrate, showing high-quality electronic features similar to traditional SETs.
Contribution
The study introduces a novel suspended SET design that is not in contact with the substrate, demonstrating comparable electronic properties to standard devices.
Findings
Well-defined I-V and dI/dV-V features observed
Device quality comparable to traditional SETs
Suspended design reduces substrate interactions
Abstract
We have fabricated aluminum single-electron transistors in which the island is not in contact with the substrate. This new type of device, which can be called suspended single-electron transistor (SUSET), displayed well-defined I-V and dI/dV-V features typical for high-quality standard SET's.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
