Electron Tunneling in Monolayer and Bilayer Graphene
Di Wu, Weiqiang Chen, and Fu-Chun Zhang
TL;DR
This paper investigates electron tunneling in monolayer and bilayer graphene using a tight-binding model, highlighting differences in transmission and potential for controlling valleytronics via external potentials.
Contribution
It provides a detailed analysis of resonance tunneling and inter-valley scattering, revealing how structural parameters influence valleytronics in graphene.
Findings
Distinct transmission properties for monolayer and bilayer graphene.
Potential to detect and control valleytronics through external electric potentials.
Identification of resonance tunneling features in graphene systems.
Abstract
Electron's tunneling through potential barrier in monolayer and bilayer graphene lattices is investigated by using full tight-binding model. Emphasis is placed on the resonance tunneling feature and inter-valley scattering probability. It is shown that normal incidence transmission probabilities for monolayer and bilayer graphene exhibit different properties. Our calculation indicates that valleytronics in graphene systems may be detected, generated and controlled by changing the structure parameters of the external electric potential.
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Taxonomy
TopicsGraphene research and applications · Quantum and electron transport phenomena · Molecular Junctions and Nanostructures