Photogalvanic effects due to quantum interference in optical transitions demonstrated by terahertz radiation absorption in Si-MOSFETs

TL;DR

This paper reports the observation and theoretical explanation of circular and linear photogalvanic effects in Si-MOSFETs, highlighting quantum interference as the underlying mechanism for these light-induced currents.

Contribution

It provides the first experimental demonstration of photogalvanic effects in silicon-based structures and develops a microscopic theory explaining the orbital origin of these effects.

Findings

Observation of circular and linear photogalvanic effects in Si-MOSFETs

Quantum interference causes the orbital photogalvanic effect

Theoretical model explains the experimental results

Abstract

We report on the observation of the circular (helicity-dependent) and linear photogalvanic effects in Si-MOSFETs with inversion channels. The developed microscopic theory demonstrates that the circular photogalvanic effect in Si structures it is of pure orbital nature originating from the quantum interference of different pathways contributing to the light absorption.