Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO
Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano,, and Hideo Hosono
TL;DR
This study reports the fabrication and characterization of epitaxial LaFeAsO thin films, revealing their electrical and optical properties, with potential implications for layered iron oxyarsenide applications.
Contribution
It demonstrates the successful growth of LaFeAsO epitaxial films via pulsed laser deposition and analyzes their optoelectronic properties for the first time.
Findings
No superconductivity observed in the films from 2-300 K.
Transmittance spectrum shows a peak at ~0.2 eV.
Electrical resistivity similar to undoped bulk samples.
Abstract
Epitaxial thin films of LaFeAsO were fabricated on MgO (001) and mixed-perovskite (La, Sr)(Al, Ta)O3 (001) single-crystal substrates by pulsed laser deposition using a Nd:YAG second harmonic source and a 10 at.% F-doped LaFeAsO disk target. Temperature dependences of the electrical resistivities showed no superconducting transition in the temperature range of 2-300 K, and were similar to those of undoped polycrystalline bulk samples. The transmittance spectrum exhibited a clear peak at ~0.2 eV, which is explained by ab-initio calculations.
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