Observation of half-integer quantum Hall effect in single-layer graphene using pulse magnet

TL;DR

This study demonstrates the observation of half-integer quantum Hall effect in single-layer graphene using pulsed magnetic fields up to 53 T, showing quantized Hall resistance at various filling factors, even at room temperature.

Contribution

The paper reports the first observation of half-integer quantum Hall effect in single-layer graphene under pulsed magnetic fields up to 53 T, including at room temperature.

Findings

Half-integer quantum Hall effect observed at high magnetic fields.

Quantized Hall resistance at filling factors ±2, ±6, and ±10.

Half-integer QHE persists at room temperature despite moderate mobility.

Abstract

We report magnetotransport measurements on a single-layer graphene in pulsed magnetic fields up to $B$ = 53 T. With either electron- or hole-type charge carriers, the Hall resistance $R_{H}$ is quantized into $R_{H}$ = $(h/e^2)\nu ^{-1}$ with $\nu$ = $\pm$2, $\pm$6, and $\pm$10, which demonstrates the observation of half-integer quantum Hall effect (QHE). At $B$ = 50 T, the half-integer QHE is even observed at room temperature in spite of a conventional carrier mobility $\mu$ = 4000 cm$^2$/Vs.