Giant fluctuations and gate control of the g-factor in InAs Nanowire Quantum Dots

TL;DR

This study investigates the g-factor behavior in InAs nanowire quantum dots, revealing large fluctuations and gate tunability, which differ from previous 2DEG quantum dot findings.

Contribution

It demonstrates significant g-factor fluctuations and electric gate control in InAs nanowire quantum dots, a novel observation compared to prior 2DEG quantum dot studies.

Findings

g-factors fluctuate between 2 and 18

Gate voltage can tune the g-factor

Large fluctuations differ from 2DEG quantum dots

Abstract

We study the g-factor of discrete electron states in InAs nanowire based quantum dots. The g values are determined from the magnetic field splitting of the zero bias anomaly due to the spin 1/2-Kondo effect. Unlike to previous studies based on 2DEG quantum dots, the g-factors of neighboring electron states show a surprisingly large fluctuation: g can scatter between 2 and 18. Furthermore electric gate tunability of the g-factor is demonstrated.