Simulation of Growth of Graded Bandgap Solid Solutions of GaAsxP1-x at Liquid Phase Electroepitaxy

TL;DR

This paper theoretically simulates the growth of graded bandgap GaAsxP1-x layers via liquid phase electroepitaxy, demonstrating how process parameters influence composition gradients and proposing electric field control for composition management.

Contribution

It introduces a theoretical model for controlling composition gradients in GaAsxP1-x layers during liquid phase electroepitaxy, including the use of electric fields for precise composition control.

Findings

Graded bandgap layers with specific composition gradients can be achieved.

Process parameters like temperature and layer thickness influence composition profiles.

Electric fields can be used to control the composition during growth.

Abstract

The possibility of the composition control of the GaAs1-xPx solid solution on the GaAs substrate at liquid phase electroepitaxy from the Ga-As-P solution-melt is theoretically considered. By the simulation it was determined, that under steady-state conditions specifying such parameters of the process as the temperature and/or the thickness of the growth space it is possible to obtain graded bandgap layers of the GaAs1-xPx solid solution with increasing of the content of P towards the surface of the layer that possess the composition gradient from 0.5x10-4 mole fraction/nm to 2.0x10-3 mole fraction/nm. It was also shown that control of the composition of ternary solid solutions at liquid phase electroepitaxy can be realized by use of unsteady state electric field.