Atmospheric pressure graphitization of SiC(0001)- A route towards wafer-size graphene layers
Konstantin V. Emtsev, Aaron Bostwick, Karsten Horn, Johannes Jobst,, Gary L. Kellogg, Lothar Ley, Jessica L. McChesney, Taisuke Ohta, Sergey A., Reshanov, Eli Rotenberg, Andreas K. Schmid, Daniel Waldmann, Heiko B. Weber,, Thomas Seyller
TL;DR
This paper presents a method for growing large-area graphene on SiC(0001) at atmospheric pressure, resulting in improved surface quality and high carrier mobility, advancing the potential for practical graphene-based devices.
Contribution
The study introduces an atmospheric pressure graphitization process for SiC(0001), enhancing surface morphology and electrical properties of graphene films compared to vacuum methods.
Findings
Improved surface morphology and larger graphene domains observed.
Carrier mobility of ~1000 cm^2/Vs at room temperature.
High mobility of 2000 cm^2/Vs at 27K.
Abstract
We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on monolayer graphene films show a carrier mobility of around 1000 cm^2/Vs at room temperature and 2000 cm^2/Vs at 27K. The growth process introduced here establishes the synthesis of graphene films on a technologically viable basis.
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Taxonomy
TopicsGraphene research and applications · Carbon Nanotubes in Composites · Chemical and Physical Properties of Materials