Electric-Field-Induced Nuclear Spin Resonance Mediated by Oscillating Electron Spin Domains in GaAs-Based Semiconductors

TL;DR

This paper introduces a novel method for nuclear spin resonance in GaAs semiconductors using electric fields to manipulate electron spin domains, offering an alternative to traditional magnetic resonance techniques.

Contribution

The study demonstrates electric-field-induced nuclear magnetic resonance mediated by oscillating electron spin domains, providing new insights into spin dynamics in semiconductor systems.

Findings

NER spectrum depends on RF power and burst duration

Spatial oscillations of domain walls induce hyperfine field oscillations

Electric control enables nuclear spin resonance without magnetic fields

Abstract

We demonstrate an alternative nuclear spin resonance using radio frequency (RF) electric field (nuclear electric resonance: NER) instead of magnetic field. The NER is based on the electronic control of electron spins forming a domain structure. The RF electric field applied to a gate excites spatial oscillations of the domain walls and thus temporal oscillations of the hyperfine field to nuclear spins. The RF power and burst duration dependence of the NER spectrum provides insight into the interplay between nuclear spins and the oscillating domain walls.