Mott Relation for Anomalous Hall and Nernst effects in Ga1-xMnxAs Ferromagnetic Semiconductors
Yong Pu, Daichi Chiba, Fumihiro Matsukura, Hideo Ohno, Jing Shi
TL;DR
This study demonstrates that the anomalous Hall and Nernst effects in Ga1-xMnxAs ferromagnetic semiconductors are intrinsically linked and obey the Mott relation, revealing fundamental insights into their transport mechanisms.
Contribution
It provides the first experimental verification of the Mott relation for anomalous Hall and Nernst effects in a ferromagnetic semiconductor.
Findings
Large anomalous Nernst effect observed at zero magnetic field
AHE and ANE share a common intrinsic origin
Mott relation validated for anomalous transport phenomena
Abstract
The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.
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