High-Frequency Properties of a Graphene Nanoribbon Field-Effect Transistor

TL;DR

This paper develops an analytical model for a graphene nanoribbon FET, analyzing its high-frequency properties and electron transport regimes, providing formulas for transconductance based on device parameters.

Contribution

It introduces an explicit analytical model for GNR-FETs that captures high-frequency behavior and transition between ballistic and collisional electron transport regimes.

Findings

Derived formulas for transconductance as a function of frequency and device parameters.

Analyzed the transition from ballistic to collisional electron transport.

Provided insights into high-frequency operation of GNR-FETs.

Abstract

We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the dc and ac source-drain currents. Using the model developed, we derive explicit analytical formulas for the GNR-FET transconductance as a function of the signal frequency, collision frequency of electrons, and the top gate length. The transition from the ballistic and to strongly collisional electron transport is considered.