Nanomachining of multilayer graphene using an atomic force microscope

TL;DR

This paper demonstrates nanomachining of multilayer graphene with an atomic force microscope, revealing reversible electrical resistance changes linked to dislocation movement and presenting theoretical models for resistance approximation.

Contribution

It introduces a novel method for nanostructuring multilayer graphene using AFM and provides theoretical models for understanding resistance changes during the process.

Findings

Reversible resistance behavior linked to dislocation movement

Permanent structural changes after multiple nanomachining attempts

Theoretical models successfully approximate measured resistance

Abstract

An atomic force microscope is used to structure a film of multilayer graphene. The resistance of the sample was measured in-situ during nanomachining a narrow trench. We found a reversible behavior in the electrical resistance which we attribute to the movement of dislocations. After several attempts also permanent changes are observed. Two theoretical approaches are presented to approximate the measured resistance.