Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window

TL;DR

This study investigates the temperature-dependent dynamic response of InAsP/InP quantum dots emitting at 1.55 μm, revealing strong carrier confinement and stable radiative properties up to room temperature, suitable for telecommunication applications.

Contribution

It provides the first time-resolved analysis of InAsP/InP quantum dots' exciton lifetime and photoluminescence behavior across a wide temperature range.

Findings

Exciton lifetime increases from 1 ns to 4 ns from low temperature to 300K.

Photoluminescence intensity decreases by only two-thirds at room temperature.

Quantum dots maintain strong carrier confinement with minimal non-radiative losses at room temperature.

Abstract

The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 $\mu$m, is investigated by means of time-resolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from 1 ns at low temperature to reach 4 ns at 300K while the integrated photoluminescence intensity decreases only by a factor of 2/3. These characteristics give evidence that such InAsP/InP quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated non-radiative recombination up to room temperature.